FDS4935A SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075230373
- Артикул
- FDS4935A
- Бренд
- Fairchild Semiconductor
- PPAP
- No
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 190 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОПx2, полевой, -30В, -7А, 1,6Вт, SO8, PoВтeОмTОмench®
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 3.9 mm |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Series | FDS4935A |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 25 ns |
| Packaging | Cut Tape |
| Pin Count | 8 |
| Rise Time | 10 ns |
| Tradename | PowerTrench |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Unit Weight | 0.006596 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | SOIC |
| Configuration | Dual Dual Drain |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SO-8 |
| Part # Aliases | FDS4935A_NL |
| Transistor Type | 2 P-Channel |
| Product Category | MOSFET |
| Supplier Package | SOIC |
| Number of Channels | 2 Channel |
| Process Technology | TMOS |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 2500 |
| Standard Package Name | SO |
| Pd - Power Dissipation | 2 W |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 10 |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 2 W |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 13 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-Off Delay Time | 48 ns |
| Maximum Drain Source Voltage | 30 V |
| Id - Continuous Drain Current | -7 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 19 S |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Gate Threshold Voltage | 1V |
| Typical Gate Charge @ Vgs (nC) | 15@5V |
| Maximum Drain Source Resistance | 23 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance | 23 mOhms |
| Typical Turn-Off Delay Time (ns) | 48 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7 |
| Typical Input Capacitance @ Vds (pF) | 1233@15V |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Maximum Drain Source Resistance (mOhm) | 23@10V |