FDS4685, Транзистор P-MOSFET, полевой, -40В, -8,2А, 2,5Вт, SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8034091083
- Артикул
- FDS4685
- Бренд
- ON Semiconductor***
- Case
- SO8
- PPAP
- No
- Width
- 4mm
- RDS-on
- 27@10V mOhm
Цена по запросу
(от 92,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Case | SO8 |
| PPAP | No |
| Width | 4mm |
| RDS-on | 27@10V mOhm |
| Series | PowerTrench |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | PowerTrench® |
| Вес, г | 0.13 |
| Gate charge | 27nC |
| Lead Finish | Matte Tin |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ONSEMI |
| Package Type | SOIC |
| Polarisation | unipolar |
| Configuration | Single Quad Drain Triple Source |
| Drain current | -8.2A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Power dissipation | 2.5W |
| Typical Fall Time | 18 ns |
| Typical Rise Time | 11 ns |
| Process Technology | TMOS |
| Type of transistor | P-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±20V |
| Max Processing Temp | 260 |
| On-state resistance | 42mΩ |
| Transistor Material | Si |
| Drain-source voltage | -40V |
| Operating Temperature | -55 to 150 °C |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 11 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 19 nC @ 5 V |
| Typical Turn-On Delay Time | 14 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 50 ns |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 1V |
| Typical Gate Charge @ Vgs (nC) | 19@5V |
| Maximum Drain Source Resistance | 27 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Continuous Drain Current | 8.2 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.2 |
| Typical Input Capacitance @ Vds (pF) | 1872@20V |
| Maximum Drain Source Resistance (mOhm) | 27@10V |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 2.5 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 8.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |