FDS4435A, Trans MOSFET P-CH 30V 9A 8-Pin SOIC T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8049234250
- Артикул
- FDS4435A
- Бренд
- ON Semiconductor***
- PPAP
- No
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
- Pin Count
- 8
Цена по запросу
(от 387 ₽)
Минимальный заказ: 197 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET P-CH 30V 9A 8-контактный SOIC T/R
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.9 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 55 |
| Typical Rise Time (ns) | 15 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 21@5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 590 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Typical Turn-Off Delay Time (ns) | 100 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.75 |
| Typical Gate to Drain Charge (nC) | 8 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.7 |
| Typical Gate to Source Charge (nC) | 6 |
| Typical Reverse Recovery Time (ns) | 36 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2010@15V |
| Maximum Drain Source Resistance (MOhm) | 17@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 260@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 9 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 125 |