FDS3890, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062321786
- Артикул
- FDS3890
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 3.9mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 160 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
НА МОП-транзистораx Semis PowerTrench® оптимизирована коммутация мощности, что обеспечивает повышенную эффективность системы и плотность мощности.
Технические параметры
| Type: | MOSFET |
| Width | 3.9mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDS3890 |
| Pin Count | 8 |
| Fall Time: | 12 ns |
| Rise Time: | 8 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | FDS3890_NL |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 35 nC |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 2 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 1.6 W, 2 W |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 11 ns |
| Maximum Drain Source Voltage | 80 V |
| Typical Turn-Off Delay Time: | 26 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 4.7 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 24 S |
| Maximum Drain Source Resistance | 82 mΩ |
| Maximum Continuous Drain Current | 4.7 A |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |