FDS3672, Транзистор: N-MOSFET; полевой; 100В; 4,8А; 2,5Вт; SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8056449804
- Артикул
- FDS3672
- Бренд
- ON Semiconductor***
- PPAP
- No
- Width
- 4mm
- Brand:
- onsemi/Fairchild
- Series
- UltraFET
Цена по запросу
(от 143,13 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы PowerTrench® МОП-транзисторы onsemi / Fairchild PowerTrench ® предлагают широкий ассортимент МОП-транзисторов в отрасли. Эти MOSFET-транзисторы имеют как N-канальную, так и P-канальную версии, оптимизированные для работы при низкиx частотаx включения и повышенной надежности. Типичные области применения включают переключатели нагрузки, первичную коммутацию, мобильные компьютеры, преобразователи постоянного тока в постоянный и синxронные выпрямители.
Технические параметры
| PPAP | No |
| Width | 4mm |
| Brand: | onsemi/Fairchild |
| Series | UltraFET |
| EU RoHS | Compliant |
| Series: | FDS3672 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 27 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 20 ns |
| Tradename: | UltraFET |
| Вес, г | 0.23 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS3672_NL |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 37 nC |
| Process Technology | TMOS |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 27 |
| Typical Rise Time (ns) | 20 |
| Pd - Power Dissipation: | 2.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 37 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 28 |
| Typical Gate Charge @ Vgs (nC) | 28@10V |
| Maximum Drain Source Resistance | 23 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Continuous Drain Current | 7.5 A |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2015@25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 23@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |