FDS3580, MOSFETs SO-8 N-CH 80V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8074764235
- Артикул
- FDS3580
- Бренд
- ON Semiconductor***
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 512 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Малосигнальный полевой транзистор, 7,6А, 80 В, N-канальный, MOSFET
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.13 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 8 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 34 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.6 |
| Typical Input Capacitance @ Vds (pF) | 1800@25V |
| Maximum Drain Source Resistance (mOhm) | 29@10V |