FDPF3860T, Транзистор: N-MOSFET; 100В; 12,7А; 33,8Вт; TO220F
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017546382
- Артикул
- FDPF3860T
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 201,84 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 20A с 3-контактным разъемом (3+ язычка) для подключения к трубке 220FP
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | ON Semiconductor/Fairchild |
| Width | 4.9 mm |
| Height | 16.07 mm |
| Length | 10.36 mm |
| Series | FDPF3860T |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Fall Time | 7 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 17 ns |
| Tradename | PowerTrench |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | Si |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Unit Weight | 0.080072 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | TO-220F |
| Корпус | to220 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Supplier Package | TO-220FP |
| Maximum IDSS (uA) | 1 |
| Number of Channels | 1 Channel |
| Process Technology | TMOS |
| Структура | MOSFET |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 50 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 33.8 W |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 17 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 33.8 W |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 15 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 24 ns |
| Maximum Drain Source Voltage | 100 V |
| Id - Continuous Drain Current | 20 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 33800 |
| Minimum Gate Threshold Voltage | 2.5V |
| Typical Gate Charge @ 10V (nC) | 23 |
| Typical Gate Charge @ Vgs (nC) | 23@10V |
| Maximum Drain Source Resistance | 38 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage (V) | 100 |
| Rds On - Drain-Source Resistance | 38.2 mOhms |
| Typical Turn-Off Delay Time (ns) | 24 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 20 |
| Typical Input Capacitance @ Vds (pF) | 1350@25V |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Maximum Drain Source Resistance (mOhm) | 38.2@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | 4 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12.7 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 33.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |