FDPF18N50T, Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220FP Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002309544
- Артикул
- FDPF18N50T
- Бренд
- ON Semiconductor***
- Case
- TO220FP
- RoHS
- Details
- Type
- Power MOSFET
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 440 ₽)
Минимальный заказ: 41 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 500В, 10,8А, 38,5Вт, TO220FP Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220FP |
| RoHS | Details |
| Type | Power MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 4.9 mm |
| Height | 16.07 mm |
| Length | 10.36 mm |
| Series | FDPF18N50T |
| Mounting | THT |
| Fall Time | 90 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 165 ns |
| Technology | Si |
| Вес, г | 1 |
| Unit Weight | 0.080072 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Package Type | TO-220F |
| Polarisation | unipolar |
| Корпус | TO-220 |
| Configuration | Single |
| Drain current | 10.8A |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Power dissipation | 38.5W |
| Number of Channels | 1 Channel |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| On-state resistance | 265mΩ |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 500V |
| Factory Pack Quantity | 50 |
| Pd - Power Dissipation | 38.5 W |
| Особенности | высоковольтный |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 38.5 W |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 55 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 95 ns |
| Maximum Drain Source Voltage | 500 V |
| Id - Continuous Drain Current | 18 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 25 S |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 265 mΩ |
| Maximum Continuous Drain Current | 18 A |
| Rds On - Drain-Source Resistance | 265 mOhms |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 18 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 38.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |