FDP42AN15A0, MOSFETs 150V 35a .42 Ohms/VGS=1V
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- Код товара
- 8004833857
- Артикул
- FDP42AN15A0
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 4.83mm
- Brand:
- onsemi/Fairchild
- Family
- Transistors-FETs, MOSFETs-Single
Цена по запросу
(от 261,27 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 150В, 24А, 150Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | MOSFET |
| Width | 4.83mm |
| Brand: | onsemi/Fairchild |
| Family | Transistors-FETs, MOSFETs-Single |
| Series | PowerTrench® |
| Series: | FDP42AN15A0 |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Packaging | Tube |
| Pin Count | 3 |
| Fall Time: | 23 ns |
| Packaging: | Tube |
| Rise Time: | 19 ns |
| Tradename: | PowerTrench |
| Вес, г | 2 |
| FET Feature | Standard |
| Power - Max | 150W |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Fairchild-Semiconductor |
| Package Type | TO-220AB |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | FDP42AN15A0_NL |
| Standard Package | 50 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 36 nC |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 12A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 150 W |
| Supplier Device Package | TO-220-3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Maximum Drain Source Voltage | 150 V |
| Typical Turn-Off Delay Time: | 27 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 150V |
| Id - Continuous Drain Current: | 35 A |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 5A(Ta), 35A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 42 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 150 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 42 Ом |