FDP33N25, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8021948706
- Артикул
- FDP33N25
- Бренд
- ON Semiconductor***
- Case
- TO220AB
- Type
- N Channel
- Brand
- onsemi
- Type:
- MOSFET
Цена по запросу
(от 336 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
250 В 33 А 94 Мом при 10 В, 16,5 А 235 Вт 5 В при 250uA N-канальные МОП-транзисторы TO-220 ROHS
Технические параметры
| Case | TO220AB |
| Type | N Channel |
| Brand | onsemi |
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| Series | UniFET |
| Series: | FDP33N25 |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 120 ns |
| Packaging: | Tube |
| Rise Time: | 230 ns |
| Вес, г | 1.95 |
| Gate charge | 48nC |
| Technology: | Si |
| Manufacturer | ONSEMI |
| Package Type | TO-220AB |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 20.4A |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 235W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 94mΩ |
| Transistor Material | Si |
| Drain-source voltage | 250V |
| Pulsed drain current | 132A |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 235W |
| Особенности | - |
| Pd - Power Dissipation: | 235 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 235 W |
| Typical Gate Charge @ Vgs | 36.8 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 35 ns |
| Input Capacitance (Ciss@Vds) | 2.135nF@25V |
| Maximum Drain Source Voltage | 250 V |
| Typical Turn-Off Delay Time: | 75 ns |
| Continuous Drain Current (Id) | 33A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 33 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 26.6 S |
| Maximum Drain Source Resistance | 94 mΩ |
| Maximum Continuous Drain Current | 33 A |
| Rds On - Drain-Source Resistance: | 94 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Пороговое напряжение на затворе | 5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 250 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 94mΩ@10V, 16.5A |