PowerTrench N-Channel MOSFET, 4 A, 150 V, 3-Pin TO-220AB FDP2572
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8012776419
- Артикул
- FDP2572
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Width
- 4.83mm
- Series
- PowerTrench
Цена по запросу
(от 960 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 4.83mm |
| Series | PowerTrench |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 5 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Корпус | TO-220AB |
| Configuration | Single |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Структура | N-Channel |
| Transistor Material | Si |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 14 |
| Особенности | TrenchFET |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 135 W |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 135000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 26 |
| Typical Gate Charge @ Vgs (nC) | 26@10V |
| Maximum Drain Source Resistance | 54 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 183 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage (V) | 150 |
| Typical Gate Plateau Voltage (V) | 4.8 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Typical Gate to Drain Charge (nC) | 6 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 8 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1770@25V |
| Maximum Drain Source Resistance (mOhm) | 54@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 40@25V |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |