FDP18N50, Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220 Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002308385
- Артикул
- FDP18N50
- Бренд
- ON Semiconductor***
- Case
- TO220AB
- RoHS
- Details
- Type
- Power Mosfet
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 466 ₽)
Минимальный заказ: 31 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор UniFETTM - это семейство высоковольтныx МОП-транзисторов, основанныx на теxнологии planar stripe и DMOS. Этот МОП-транзистор разработан специально для снижения сопротивления во включенном состоянии и обеспечения лучшей коммутационной способности и более высокой лавинообразной энергии.
Технические параметры
| Case | TO220AB |
| RoHS | Details |
| Type | Power Mosfet |
| Brand | ON Semiconductor/Fairchild |
| Type: | Power MOSFET |
| Width | 4.7 mm |
| Brand: | onsemi/Fairchild |
| Height | 16.3 mm |
| Length | 10.67 mm |
| Series | FDP18N50 |
| Mounting | THT |
| Fall Time | 90 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 165 ns |
| Fall Time: | 90 ns |
| Packaging: | Tube |
| Rise Time: | 165 ns |
| Technology | Si |
| Вес, г | 1 |
| Gate charge | 60nC |
| Technology: | Si |
| Unit Weight | 0.063493 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Package Type | TO-220 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 10.8A |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 235W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Number of Channels | 1 Channel |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 265mΩ |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 500V |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 50 |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation | 38.5 W |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 38.5 W |
| Maximum Power Dissipation | 235 W |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 55 ns |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 95 ns |
| Typical Turn-On Delay Time: | 55 ns |
| Typical Turn-Off Delay Time: | 95 ns |
| Continuous Drain Current (Id) | 20A |
| Id - Continuous Drain Current | 8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 25 S |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 25 S |
| Rds On - Drain-Source Resistance | 265 mOhms |
| Rds On - Drain-Source Resistance: | 265 mOhms |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Крутизна характеристики, S | 25 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 18 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 235 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |