FDN5618P, Транзистор P-MOSFET, полевой, -60В, -1,25А, 0,46Вт, SuperSOT-3
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- Код товара
- 8063165238
- Артикул
- FDN5618P
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
- Width
- 1.4 mm
Цена по запросу
(от 75,67 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы PowerTrench® - это оптимизированные силовые переключатели, которые повышают эффективность системы и удельную мощность.
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 1.4 mm |
| Height | 1.12 mm |
| Length | 2.9 mm |
| Series | FDN5618P |
| Product | MOSFET Small Signal |
| Fall Time | 8 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 8 ns |
| Tradename | PowerTrench |
| Technology | Si |
| Вес, г | 0.05 |
| Unit Weight | 0.001058 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SSOT-3 |
| Part # Aliases | FDN5618P_NL |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 8.6 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 6.5 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 16.5 ns |
| Maximum Drain Source Voltage | 60 V |
| Id - Continuous Drain Current | -1.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 4.3 S |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 170 mΩ |
| Maximum Continuous Drain Current | 1.25 A |
| Rds On - Drain-Source Resistance | 170 mOhms |
| Vds - Drain-Source Breakdown Voltage | -60 V |