FDN352AP, Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8674692770
- Артикул
- FDN352AP
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type:
- MOSFET
- Width
- 1.4mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 82 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -30В, -1,3А, 500мВт, SuperSOT-3
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| EU RoHS | Compliant |
| Series: | FDN352AP |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 15 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 15 ns |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | SSOT-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | FDN352AP_NL |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.9 nC |
| Process Technology | TMOS |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 1 |
| Typical Rise Time (ns) | 15 |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 10 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 1.4@4.5V |
| Forward Transconductance - Min: | 2 S |
| Maximum Drain Source Resistance | 180 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 4 |
| Maximum Continuous Drain Current | 1.3 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 10 |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.3 |
| Typical Input Capacitance @ Vds (pF) | 150@15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 180@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Крутизна характеристики, S | 2 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 352 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±25В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.18 Ом |