FDN338P, Транзисторы, диоды,управляемые ключи, сборки и модули SOT23-3
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- Код товара
- 8002651028
- Артикул
- FDN338P
- Бренд
- ON Semiconductor***
- Case
- SuperSOT-3
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 54,23 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзисторы, диоды,управляемые ключи, сборки и модули SOT23-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | SuperSOT-3 |
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Width | 1.4 mm |
| Height | 1.12 mm |
| Length | 2.9 mm |
| Series | FDN338P |
| Product | MOSFET Small Signal |
| Mounting | SMD |
| Fall Time | 11 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 11 ns |
| Tradename | PowerTrench |
| Technology | PowerTrench® |
| Вес, г | 0.03 |
| Gate charge | 6.2nC |
| Unit Weight | 0.001058 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ONSEMI |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Корпус | SOT23-3 |
| Configuration | Single |
| Drain current | -1.6A |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SSOT-3 |
| Part # Aliases | FDN338P_NL |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Power dissipation | 0.5W |
| Number of Channels | 1 Channel |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±8V |
| On-state resistance | 0.165Ω |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Drain-source voltage | -20V |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 4.4 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 8 V |
| Typical Turn-On Delay Time | 10 ns |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 16 ns |
| Maximum Drain Source Voltage | 20 V |
| Id - Continuous Drain Current | -1.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 6 S |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Drain Source Resistance | 115 mΩ |
| Maximum Continuous Drain Current | 1.6 A |
| Rds On - Drain-Source Resistance | 115 mOhms |
| Features of semiconductor devices | logic level |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Крутизна характеристики, S | 6.5 |
| Пороговое напряжение на затворе | -0.4…-1 В |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±8В |