FDN308P, Транзистор P-MOSFET, полевой, -20В, -1,5А, 500мВт, SuperSOT-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072534528
- Артикул
- FDN308P
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
- Series:
- FDN308P
- Product:
- MOSFET Small Signal
Цена по запросу
(от 53,60 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -20В, -1,5А, 500мВт, SuperSOT-3
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| Series: | FDN308P |
| Product: | MOSFET Small Signal |
| Fall Time: | 10 ns |
| Rise Time: | 10 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-3 |
| Part # Aliases: | FDN308P_NL |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 500 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 12 ns |
| Id - Continuous Drain Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 12 S |
| Rds On - Drain-Source Resistance: | 86 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |