FDN306P, Транзистор P-МОП, полевой, -12В, -2,6А, 500мВт, SupeОмSOT-3
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- Код товара
- 8017540935
- Артикул
- FDN306P
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
- Type:
- MOSFET
Цена по запросу
(от 47,17 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, -12В, -2,6А, 500мВт, SupeОмSOT-3
Технические параметры
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Type: | MOSFET |
| Width | 1.4 mm |
| Brand: | onsemi/Fairchild |
| Height | 1.12 mm |
| Length | 2.9 mm |
| Series | FDN306P |
| Product | MOSFET Small Signal |
| Series: | FDN306P |
| Product: | MOSFET Small Signal |
| Fall Time | 10 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 10 ns |
| Tradename | PowerTrench |
| Fall Time: | 10 ns |
| Rise Time: | 10 ns |
| Technology | Si |
| Tradename: | PowerTrench |
| Вес, г | 0.03 |
| Technology: | Si |
| Unit Weight | 0.001058 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SSOT-3 |
| Part # Aliases | FDN306P_NL |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-3 |
| Part # Aliases: | FDN306P_NL |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Pd - Power Dissipation: | 500 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 12 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 8 V |
| Typical Turn-On Delay Time | 11 ns |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Maximum Drain Source Voltage | 12 V |
| Typical Turn-Off Delay Time: | 38 ns |
| Id - Continuous Drain Current | -2.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 10 S |
| Id - Continuous Drain Current: | 2.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 10 S |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Continuous Drain Current | 2.6 A |
| Rds On - Drain-Source Resistance | 40 mOhms |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Vds - Drain-Source Breakdown Voltage | -12 V |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |