FDN304PZ,Power MOSFET, P Channel, 20 V, 2.4 A, 0.036 ohm, SuperSOT, Surface Mount
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- Код товара
- 8878892018
- Артикул
- FDN304PZ
- Бренд
- ON Semiconductor***
- Case
- SuperSOT-3
- PPAP
- No
- Width
- 1.4mm
- Series
- PowerTrench
Цена по запросу
(от 90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы PowerTrench® - это оптимизированные силовые переключатели, которые повышают эффективность системы и удельную мощность.
Технические параметры
| Case | SuperSOT-3 |
| PPAP | No |
| Width | 1.4mm |
| Series | PowerTrench |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | PowerTrench® |
| Вес, г | 50 |
| Gate charge | 20nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ONSEMI |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | -2.4A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Power dissipation | 0.5W |
| Process Technology | TMOS |
| Type of transistor | P-MOSFET |
| Структура | P-Channel |
| Gate-source voltage | ±8V |
| On-state resistance | 0.1Ω |
| Transistor Material | Si |
| Drain-source voltage | -20V |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 15 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 12 nC @ 4.5 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Gate Threshold Voltage | 0.4V |
| Typical Gate Charge @ Vgs (nC) | 12@4.5V |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Continuous Drain Current | 2.4 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Features of semiconductor devices | logic level |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.4 |
| Typical Input Capacitance @ Vds (pF) | 1310@10V |
| Maximum Drain Source Resistance (mOhm) | 52@4.5V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.4 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.036 Ом |