FDMS86350, Транзистор: N-MOSFET; полевой; 80В; 130А; 156Вт; PQFN8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063432712
- Артикул
- FDMS86350
- Бренд
- ON Semiconductor***
- Width
- 6.25mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
- Series:
- FDMS86350
Цена по запросу
(от 370 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| Width | 6.25mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDMS86350 |
| Pin Count | 8 |
| Fall Time: | 11 ns |
| Rise Time: | 34 ns |
| Tradename: | PowerTrench Power Clip |
| Вес, г | 0.24 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | PQFN8 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-56-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 110 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 156 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 156 W |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 50 ns |
| Maximum Drain Source Voltage | 80 V |
| Typical Turn-Off Delay Time: | 40 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 80 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 70 S |
| Maximum Drain Source Resistance | 3.8 mΩ |
| Maximum Continuous Drain Current | 130 A |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |