FDMS86322, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044616062
- Артикул
- FDMS86322
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series
- PowerTrenchВ®
- FET Type
- N-Channel
- Packaging
- Cut Tape(CT)
Цена по запросу
(от 237,42 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| Brand: | onsemi/Fairchild |
| Series | PowerTrenchВ® |
| FET Type | N-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | В±20V |
| Fall Time: | 13 ns |
| Rise Time: | 20 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.01 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | Power-56-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 7.65 mOhm @ 13A, 10V |
| Pd - Power Dissipation: | 104 W |
| Power Dissipation (Max) | 2.5W(Ta), 104W(Tc) |
| Supplier Device Package | 8-PQFN(5x6) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Id - Continuous Drain Current: | 13 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 45 S |
| Rds On - Drain-Source Resistance: | 7.65 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 50V |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Current - Continuous Drain (Id) @ 25В°C | 13A(Ta), 60A(Tc) |