FDMS86101, MOSFETs 100/20V Nch Power Trench
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- Код товара
- 8004833759
- Артикул
- FDMS86101
- Бренд
- ON Semiconductor***
- Width
- 6.25mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrenchВ®
- Series:
- FDMS86101
Цена по запросу
(от 266,74 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 60А, 104Вт, PQFN8 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 6.25mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrenchВ® |
| Series: | FDMS86101 |
| FET Type | N-Channel |
| Packaging | Tape & Reel(TR) |
| Pin Count | 8 |
| Vgs (Max) | В±20V |
| Fall Time: | 7 ns |
| Rise Time: | 11 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | PowerTrench |
| Вес, г | 0.5 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | PQFN8 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-56-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 13A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 2.5 W |
| Power Dissipation (Max) | 2.5W(Ta), 104W(Tc) |
| Supplier Device Package | 8-PQFN(5x6) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 104 W |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 27 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100V |
| Id - Continuous Drain Current: | 12.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 14 mΩ |
| Maximum Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 50V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 12.4A(Ta), 60A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 104 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |