PowerTrench N-Channel MOSFET, 100 A, 238 A, 40 V, 8-Pin PQFN8 FDMS8320L
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030794298
- Артикул
- FDMS8320L
- Бренд
- ON Semiconductor***
- Width
- 6mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
- FET Type
- N-Channel
Цена по запросу
(от 468,88 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| Width | 6mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| FET Type | N-Channel |
| Packaging | Tape & Reel(TR) |
| Pin Count | 8 |
| Vgs (Max) | В±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | PQFN8 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-56-8 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 170 nC |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 32A, 10V |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 104 W |
| Power Dissipation (Max) | 2.5W(Ta), 104W(Tc) |
| Supplier Device Package | 8-PQFN(5x6) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 104 W |
| Typical Gate Charge @ Vgs | 121 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 40V |
| Id - Continuous Drain Current: | 36 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 1.7 mΩ |
| Maximum Continuous Drain Current | 100 A, 238 A |
| Rds On - Drain-Source Resistance: | 1.1 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 11110pF @ 20V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Current - Continuous Drain (Id) @ 25В°C | 36A(Ta), 100A(Tc) |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 104 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |