FDMS8050, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062134891
- Артикул
- FDMS8050
- Бренд
- ON Semiconductor***
- PPAP
- No
- SVHC
- Yes
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 583,57 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH Si 30V 55A 8-контактный PQFN EP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.01 |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 6.25(Max)mm |
| Package Length | 5.1(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Standard Package Name | QFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 22 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2700 |
| Typical Gate Charge @ 10V (nC) | 204 |
| Typical Gate Charge @ Vgs (nC) | 204@10V|93@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 29 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 87 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 55 |
| Typical Input Capacitance @ Vds (pF) | 16150@15V |
| Maximum Drain-Source Resistance (mOhm) | 0.65@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |