FDMS3D5N08LC, MOSFETs PTNG 80/20V IN 5X6CL IP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006247021
- Артикул
- FDMS3D5N08LC
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 22 ns
- Rise Time:
- 20 ns
- Вес, г
- 0.12
Цена по запросу
(от 413,84 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 22 ns |
| Rise Time: | 20 ns |
| Вес, г | 0.12 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | PQFN-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 82 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Особенности | - |
| Pd - Power Dissipation: | 125 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 70 ns |
| Id - Continuous Drain Current: | 136 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 300 S |
| Rds On - Drain-Source Resistance: | 3.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |