FDMS3660S, Транзистор: N-MOSFET
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- Код товара
- 8062328084
- Артикул
- FDMS3660S
- Бренд
- ON Semiconductor***
- Case
- PQFN8
- RoHS
- Details
- Brand
- ON Semiconductor/Fairchild
- Width
- 5 mm
Цена по запросу
(от 150 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Case | PQFN8 |
| RoHS | Details |
| Brand | ON Semiconductor/Fairchild |
| Width | 5 mm |
| Brand: | onsemi/Fairchild |
| Height | 1.1 mm |
| Length | 6 mm |
| Series | FDMS3660S |
| Mounting | SMD |
| Packaging | Cut Tape |
| Tradename | Power Stage PowerTrench |
| Technology | Si |
| Вес, г | 0.16 |
| Gate charge | 29/87nC |
| Technology: | Si |
| Unit Weight | 0.006032 oz |
| Manufacturer | ON Semiconductor |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Drain current | 30/60A |
| Manufacturer: | onsemi |
| Package/Case: | Power-56-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | Power-56-8 |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 2 N-Channel |
| Power dissipation | 2.2/2.5W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC, 87 nC |
| Number of Channels | 2 Channel |
| Type of transistor | N-MOSFET x2 |
| Gate-source voltage | ±20/±12V |
| Number of Channels: | 2 Channel |
| On-state resistance | 11/2.6mΩ |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 30/30V |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 2.2 W, 2.5 W |
| Pd - Power Dissipation: | 2.2 W, 2.5 W |
| Vgs - Gate-Source Voltage | 20 V, 12 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V, -12 V, +12 V |
| Id - Continuous Drain Current | 13 A, 30 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 13 A, 30 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 8 mOhms, 1.8 mOhms |
| Rds On - Drain-Source Resistance: | 8 mOhms, 1.8 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |