FDMS3600S, Mosfet Array
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064095647
- Артикул
- FDMS3600S
- Бренд
- ON Semiconductor***
- PPAP
- No
- SVHC
- Yes
- Category
- Power MOSFET
- Material
- Si
Цена по запросу
(от 376,31 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
FDMS3600S НА полупроводниковыx транзистораx MOSFETs N-CH Si 25V 15A/30A с 8-контактным разъемом питания 56 T/R Si - Arrow.com
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Category | Power MOSFET |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Length | 5 |
| Supplier Package | PQFN EP |
| Standard Package Name | QFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 1.8@Q 1|3.9@Q 2 |
| Typical Rise Time (ns) | 5.3@Q 2|2@Q 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2200@Q1|2500@Q2 |
| Typical Gate Charge @ 10V (nC) | 19@Q1|59@Q2 |
| Typical Gate Charge @ Vgs (nC) | 19@10V|9@4.5V@Q1|59@10V|27@4.5V@Q2 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7.9@Q 1|13@Q 2 |
| Maximum Drain-Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 38@Q 2|19@Q 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 15@Q1|30@Q2 |
| Typical Input Capacitance @ Vds (pF) | 1330@13V@Q1|4255@13V@Q2 |
| Maximum Drain-Source Resistance (mOhm) | 5.6@10V@Q1|1.6@10V@Q2 |