FDMC86260ET150, MOSFETs 150V N-Channel Power Trench MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8007051297
- Артикул
- FDMC86260ET150
- Бренд
- ON Semiconductor***
- PPAP
- No
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
- Packaging
- Tape and Reel
Цена по запросу
(от 288,44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 150V 5.4A с 8-контактным разъемом питания QFN EP T/R
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | Power QFN EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Структура | N-Channel |
| Standard Package Name | QFN |
| Typical Fall Time (ns) | 3.3 |
| Typical Rise Time (ns) | 2 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V|9.7@6V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9.5 |
| Maximum Drain Source Voltage (V) | 150 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.4 |
| Typical Input Capacitance @ Vds (pF) | 1000@75V |
| Maximum Drain Source Resistance (mOhm) | 34@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |