FDMC86102LZ, MOSFETs 100V N-Channel PowerTrench MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833653
- Артикул
- FDMC86102LZ
- Бренд
- ON Semiconductor***
- MSL
- MSL 1-Unlimited
- Width
- 3.3mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 231,47 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| MSL | MSL 1-Unlimited |
| Width | 3.3mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDMC86102LZ |
| Pin Count | 8 |
| Fall Time: | 2.5 ns |
| Rise Time: | 2.3 ns |
| Tradename: | PowerTrench |
| Вес, г | 1 |
| No. of Pins | 8Pins |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | Power 33 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Range | PowerTrench |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-33-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15.3 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Mounting | Surface Mount |
| Transistor Polarity: | N-Channel |
| Transistor Case Style | Power 33 |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 41 W |
| Drain Source Voltage Vds | 100V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 41 W |
| Operating Temperature Max | 150°C |
| Typical Gate Charge @ Vgs | 15.3 nC @ 10 V, 7.6 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Continuous Drain Current Id | 22A |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7.1 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 24 S |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Continuous Drain Current | 22 A |
| Gate Source Threshold Voltage Max | 1.6V |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 41 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |