FDMC008N08C, MOSFETs 80V/20V N-Channel PTNG MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833612
- Артикул
- FDMC008N08C
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series:
- FDMC008N08C
- Fall Time:
- 3 ns
- Rise Time:
- 3 ns
Цена по запросу
(от 233,67 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi/Fairchild |
| Series: | FDMC008N08C |
| Fall Time: | 3 ns |
| Rise Time: | 3 ns |
| Вес, г | 0.15 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | Power-33-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 57 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 18 ns |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 50 S |
| Rds On - Drain-Source Resistance: | 6.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 80 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |