FDMA410NZT, Trans MOSFET N-CH 20V 9.5A 6-Pin UDFN EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002309840
- Артикул
- FDMA410NZT
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series
- -
- Series:
- FDMA410NZT
- FET Type
- N-Channel
Цена по запросу
(от 100 ₽)
Минимальный заказ: 858 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Ультратонкий N-канальный MOSFET PowerTrench, напряжение питания 20 В, Постоянный ток стока 9,5 А, Рассеиваемая мощность 2,4 Вт, 6-контактный разъем для поверxностного монтажа, T/R - Лента и катушка (Alt: FDMA410NZT)
Технические параметры
| Brand: | onsemi/Fairchild |
| Series | - |
| Series: | FDMA410NZT |
| FET Type | N-Channel |
| Packaging | Tape & Reel(TR) |
| Vgs (Max) | В±8V |
| Fall Time: | 3.3 ns |
| Rise Time: | 3 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Style: | SMD/SMT |
| Package / Case: | UMLP-6 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 9.5A, 4.5V |
| Pd - Power Dissipation: | 2.4 W |
| Power Dissipation (Max) | 2.4W(Ta) |
| Supplier Device Package | 6-MicroFET(2x2) |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 8.5 ns |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Typical Turn-Off Delay Time: | 27 ns |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 9.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 36 S |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Current - Continuous Drain (Id) @ 25В°C | 9.5A(Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |