FDMA1023PZ, MOSFETs -20V Dual P-Ch PowerTrench MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833591
- Артикул
- FDMA1023PZ
- Бренд
- ON Semiconductor***
- PPAP
- No
- Brand:
- onsemi/Fairchild
- EU RoHS
- Compliant
- Series:
- FDMA1023PZ
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET x2, полевой, -20В, -3,7А, 1,5Вт, MicroFET Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant |
| Series: | FDMA1023PZ |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 12 ns |
| Lead Shape | No Lead |
| Rise Time: | 12 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.04 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | MicroFET-6 |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Transistor Type: | 2 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Process Technology | PowerTrench |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 37 |
| Typical Rise Time (ns) | 12 |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 1.5 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 64 ns |
| Id - Continuous Drain Current: | 3.7 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 8.6@4.5V |
| Forward Transconductance - Min: | 12 S |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 100 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 64 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 72 mOhms |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 2 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate Threshold Voltage (V) | 0.7 |
| Typical Gate to Source Charge (nC) | 0.7 |
| Typical Reverse Recovery Time (ns) | 32 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 490@10V |
| Typical Reverse Recovery Charge (nC) | 15 |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 72@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 90@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.7 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 173 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |