FDM3622, Транзистор: N-MOSFET; полевой; 100В; 4,4А; 2,1Вт; WDFN8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072506020
- Артикул
- FDM3622
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
- EU RoHS
- Compliant
Цена по запросу
(от 173,49 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant |
| Series: | FDM3622 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 26 ns |
| Lead Shape | No Lead |
| Rise Time: | 25 ns |
| Tradename: | UltraFET |
| Вес, г | 0.19 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-33-8 |
| Part # Aliases: | FDM3622_NL |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Process Technology | TMOS |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 26 |
| Typical Rise Time (ns) | 25 |
| Pd - Power Dissipation: | 2.1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 35 ns |
| Id - Continuous Drain Current: | 4.4 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2100 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 13 |
| Typical Gate Charge @ Vgs (nC) | 13@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.4 |
| Typical Input Capacitance @ Vds (pF) | 820@25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 60@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |