FDG6301N ON
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072303939
- Артикул
- FDG6301N
- Бренд
- ON Semiconductor***
- Type
- FET
- Brand
- ON Semiconductor/Fairchild
- Series
- FDG6301N
- Product
- MOSFET Small Signal
Цена по запросу
(от 143 ₽)
Минимальный заказ: 11 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type | FET |
| Brand | ON Semiconductor/Fairchild |
| Series | FDG6301N |
| Product | MOSFET Small Signal |
| Fall Time | 4.5 ns |
| Packaging | Cut Tape or Reel |
| Rise Time | 4.5 ns |
| Technology | Si |
| Вес, г | 1 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Product Type | MOSFET |
| Configuration | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-6 |
| Part # Aliases | FDG6301N_NL |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Number Of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 300 mW |
| Vgs - Gate-Source Voltage | 8 V |
| Typical Turn-On Delay Time | 5 ns |
| Typical Turn-Off Delay Time | 4 ns |
| Id - Continuous Drain Current | 220 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 0.2 S |
| Rds On - Drain-Source Resistance | 4 Ohms |
| Vds - Drain-Source Breakdown Voltage | 25 V |