FDFMA2P853T, Trans MOSFET P-CH 20V 3A 6-Pin MicroFET T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8049252791
- Артикул
- FDFMA2P853T
- Бренд
- ON Semiconductor***
- PPAP
- No
- Category
- Power MOSFET
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 81 ₽)
Минимальный заказ: 1140 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET P-CH 20V 3A 6-контактный MicroFET T/R
Технические параметры
| PPAP | No |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 2 mm |
| Package Length | 2 mm |
| Supplier Package | MicroFET |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Gate Charge @ Vgs (nC) | 4@4.5V |
| Maximum Gate-Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Typical Input Capacitance @ Vds (pF) | 435@10V |
| Maximum Drain-Source Resistance (mOhm) | 120@4.5V |