FDD86250, MOSFETs 150V N-Channel PowerTrench MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833523
- Артикул
- FDD86250
- Бренд
- ON Semiconductor***
- Width
- 6.22mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
- Series:
- FDD86250
Цена по запросу
(от 158,06 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDD86250 |
| FET Type | N-Channel |
| Packaging | Tape & Reel(TR) |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | PowerTrench |
| Вес, г | 710 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 33 nC |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 8A, 10V |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 132 W |
| Power Dissipation (Max) | 3.1W(Ta), 132W(Tc) |
| Supplier Device Package | D-PAK(TO-252) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 132 W |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Maximum Drain Source Voltage | 150 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 150V |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 28 S |
| Maximum Drain Source Resistance | 45 mΩ |
| Maximum Continuous Drain Current | 8 A |
| Rds On - Drain-Source Resistance: | 31 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 2110pF @ 75V |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 8A(Ta), 50A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |