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FDD86102, 100V 8A 24mOhm@10V,8A 3.1W 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS

FDD86102, 100V 8A 24mOhm@10V,8A 3.1W 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS

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Код товара
8017593641
Артикул
FDD86102
Бренд
ON Semiconductor***
Width
6.22mm
Brand:
onsemi/Fairchild
Series
PowerTrench
Series:
FDD86102
Цена по запросу
(от 151,89 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

МОП-транзисторы Fairchild PowerTrench

Технические параметры

Width6.22mm
Brand:onsemi/Fairchild
SeriesPowerTrench
Series:FDD86102
Pin Count3
Tradename:PowerTrench
Вес, г0.44
Technology:Si
Channel ModeEnhancement
Channel TypeN
Package TypeDPAK(TO-252)
Subcategory:MOSFETs
Channel Mode:Enhancement
Manufacturer:onsemi
Mounting TypeSurface Mount
Product Type:MOSFET
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:DPAK-3
Transistor Type:1 N-Channel
Product Category:MOSFET
Qg - Gate Charge:13.4 nC
Number of Channels:1 Channel
Transistor MaterialSi
Transistor Polarity:N-Channel
Pd - Power Dissipation:3.1 W
Transistor ConfigurationSingle
Maximum Power Dissipation62 W
Typical Gate Charge @ Vgs13.4 nC @ 10 V
Vgs - Gate-Source Voltage:-20 V, +20 V
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Maximum Drain Source Voltage100 V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Id - Continuous Drain Current:8 A
Maximum Operating Temperature:+125 C
Minimum Gate Threshold Voltage2V
Minimum Operating Temperature:-55 C
Forward Transconductance - Min:21 S
Maximum Drain Source Resistance44 mΩ
Maximum Continuous Drain Current36 A
Rds On - Drain-Source Resistance:19 mOhms
Vds - Drain-Source Breakdown Voltage:100 V
Vgs th - Gate-Source Threshold Voltage:3.1 V
Factory Pack Quantity: Factory Pack Quantity:2500

Техническая документация