FDD6685, 30V 20mOhm@10V,11A 52W P Channel TO-252 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025169846
- Артикул
- FDD6685
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 6.22mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Type: | MOSFET |
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDD6685 |
| Pin Count | 3 |
| Fall Time: | 21 ns |
| Rise Time: | 11 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.44 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Корпус | TO-252 |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Part # Aliases: | FDD6685_NL |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 52 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 52 W |
| Typical Gate Charge @ Vgs | 17 nC @ 5 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 17 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 43 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 40 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 26 S |
| Maximum Drain Source Resistance | 30 mΩ |
| Maximum Continuous Drain Current | 11 A |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Крутизна характеристики, S | 26 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 52 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±25В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 20мОм |