FDD4685, MOSFETs -40V P-Channel PowerTrench MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833490
- Артикул
- FDD4685
- Бренд
- ON Semiconductor***
- Type
- -
- Width
- 6.22mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 111,11 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -40В, -32А, 69Вт, TO252 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type | - |
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDD4685 |
| Pin Count | 3 |
| Fall Time: | 14 ns |
| Rise Time: | 15 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.33 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Power Dissipation (Pd) | - |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 69 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 69 W |
| Typical Gate Charge @ Vgs | 19 nC @ 5 V |
| Total Gate Charge (Qg@Vgs) | - |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Input Capacitance (Ciss@Vds) | - |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 34 ns |
| Continuous Drain Current (Id) | - |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 32 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Continuous Drain Current | 8.4 A |
| Rds On - Drain-Source Resistance: | 27 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |