FDD4243,Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8302770252
- Артикул
- FDD4243
- Бренд
- ON Semiconductor***
- Tab
- Tab
- Case
- DPAK
- PPAP
- No
- RoHS
- Details
Цена по запросу
(от 133 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы PowerTrench® МОП-транзисторы onsemi / Fairchild PowerTrench ® предлагают широкий ассортимент МОП-транзисторов в отрасли. Эти MOSFET-транзисторы имеют как N-канальную, так и P-канальную версии, оптимизированные для работы при низкиx частотаx включения и повышенной надежности. Типичные области применения включают переключатели нагрузки, первичную коммутацию, мобильные компьютеры, преобразователи постоянного тока в постоянный и синxронные выпрямители.
Технические параметры
| Tab | Tab |
| Case | DPAK |
| PPAP | No |
| RoHS | Details |
| Type | Power Mosfet |
| Brand | ON Semiconductor/Fairchild |
| Type: | Power MOSFET |
| Width | 6.22 mm |
| Brand: | onsemi/Fairchild |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Series | FDD4243 |
| EU RoHS | Compliant with Exemption |
| Series: | FDD4243 |
| FET Type | P-Channel |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 7 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 15 ns |
| Tradename | PowerTrench |
| Vgs (Max) | ±20V |
| Automotive | No |
| Fall Time: | 7 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 15 ns |
| Technology | Si |
| Tradename: | PowerTrench |
| Вес, г | 0.66 |
| Gate charge | 29nC |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Unit Weight | 0.009184 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-252 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | -14A |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 42W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Number of Channels | 1 Channel |
| Process Technology | TMOS |
| Type of transistor | P-MOSFET |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Структура | P-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 69mΩ |
| Transistor Polarity | P-Channel |
| Drain-source voltage | -40V |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 2500 |
| Operating Temperature | -55°C ~ 155°C(TJ) |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 42 W |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 6.7A, 10V |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 15 |
| Особенности | - |
| Pd - Power Dissipation: | 42 W |
| Power Dissipation (Max) | 42W(Tc) |
| Supplier Device Package | TO-252AA |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 6 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Typical Turn-Off Delay Time: | 22 ns |
| Id - Continuous Drain Current | -6.7 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 40 V |
| Forward Transconductance - Min | 16 S |
| Id - Continuous Drain Current: | 6.7 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 42000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 21 |
| Typical Gate Charge @ Vgs (nC) | 21@10V |
| Forward Transconductance - Min: | 16 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Drain Source Voltage (V) | 40 |
| Rds On - Drain-Source Resistance | 44 mOhms |
| Typical Turn-Off Delay Time (ns) | 22 |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 20 V |
| Maximum Continuous Drain Current (A) | 6.7 |
| Typical Input Capacitance @ Vds (pF) | 1165@20V |
| Vds - Drain-Source Breakdown Voltage | -40 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Drain Source Resistance (mOhm) | 44@10V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A(Ta), 14A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Крутизна характеристики, S | 16 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 14 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.036 Ом |