FDD3N40TM, MOSFETs 400V N-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833487
- Артикул
- FDD3N40TM
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor/Fairchild
- Width
- 6.22 mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 91,22 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 400В, 1,25А, 30Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor/Fairchild |
| Width | 6.22 mm |
| Brand: | onsemi/Fairchild |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Series | FDD3N40 |
| Вид | MOSFET |
| Тип | полевой |
| Series: | FDD3N40 |
| Fall Time | 25 ns |
| Packaging | Reel |
| Rise Time | 30 ns |
| Fall Time: | 25 ns |
| Rise Time: | 30 ns |
| Technology | Si |
| Вес, г | 0.26 |
| Technology: | Si |
| Unit Weight | 0.009184 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 30 W |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 30 W |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 10 ns |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current | 2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 2 S |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2 S |
| Rds On - Drain-Source Resistance | 2.8 Ohms |
| Rds On - Drain-Source Resistance: | 2.8 Ohms |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 400 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |