PowerTrench N-Channel MOSFET, 5.5 A, 30 V, 6-Pin SSOT-6 FDC645N
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- Код товара
- 8016722206
- Артикул
- FDC645N
- Бренд
- ON Semiconductor***
- Case
- SuperSOT-6
- Type:
- MOSFET
- Width
- 1.7mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 126,12 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| Case | SuperSOT-6 |
| Type: | MOSFET |
| Width | 1.7mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDC645N |
| Mounting | SMD |
| Product: | MOSFET Small Signal |
| Pin Count | 6 |
| Fall Time: | 9 ns |
| Rise Time: | 9 ns |
| Tradename: | PowerTrench |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ONSEMI |
| Package Type | SSOT-6 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 5.5A |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC645N_NL |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 1.6W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 21 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±12V |
| Number of Channels: | 1 Channel |
| On-state resistance | 48mΩ |
| Transistor Material | Si |
| Drain-source voltage | 30V |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | TrenchFET |
| Pd - Power Dissipation: | 1.6 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.6 W |
| Typical Gate Charge @ Vgs | 13 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 35 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 5.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 33 S |
| Maximum Drain Source Resistance | 48 mΩ |
| Maximum Continuous Drain Current | 5.5 A |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |