FDC642P-F085PBK, MOSFETs P-Channel PowerTrench MOSFET, -20V, -4A, 100mohm
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8065913123
- Артикул
- FDC642P-F085PBK
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- Mounting
- Surface Mount
- Pin Count
- 6
- Automotive
- Yes
Цена по запросу
(от 105,33 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 4A 6-контактный TSOT-23 Автомобильный AEC-Q101
Технические параметры
| PPAP | Yes |
| Mounting | Surface Mount |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| Package Width | 1.5 |
| Package Length | 2.95 |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-23 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 9.6 |
| Typical Rise Time (ns) | 5.5 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1200 |
| Typical Gate Charge @ Vgs (nC) | 6.9@4.5V |
| Maximum Gate-Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 7.3 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 23.2 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 630@10V |
| Maximum Drain-Source Resistance (mOhm) | 65@4.5V |
| Maximum Gate-Source Leakage Current (nA) | 100 |