FDC6420C, MOSFETs 20V/-20V N/P
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004584527
- Артикул
- FDC6420C
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 1.7mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 76,59 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N/P-МОП, полевой, 20/-20В, 3/-2,2А, 0,9Вт SOT6
Технические параметры
| Type: | MOSFET |
| Width | 1.7mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDC6420C |
| Product: | MOSFET Small Signals |
| Pin Count | 6 |
| Fall Time: | 7 ns, 12 ns |
| Rise Time: | 7 ns, 12 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.05 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Package Type | SSOT-6 |
| Subcategory: | MOSFETs |
| Монтаж | SMD |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC6420C_NL |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Мощность | 0.9Вт |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.6 nC, 3.7 nC |
| Ток стока | 3/-2.2А |
| Структура | MOSFET |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Полярность | полевой |
| Forward Diode Voltage | 1.2V |
| Особенности | комплементарная пара транзисторов |
| Pd - Power Dissipation: | 960 mW |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 960 mW |
| Typical Gate Charge @ Vgs | 3.3 nC @ 4.5 V, 3.7 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Производитель | ON SEMICONDUCTOR(FAIRCHILD) |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 5 ns, 9 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 13 ns, 10 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Тип транзистора | N/P-MOSFET |
| Id - Continuous Drain Current: | 3 A, 2.2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 10 S, 6 S |
| Maximum Drain Source Resistance | 106 mΩ, 190 mΩ |
| Maximum Continuous Drain Current | 2.2 A, 3 A |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV, 600 mV |
| Напряжение сток-исток | 20/-20В |
| Напряжение затвор-исток | ±12В |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Крутизна характеристики, S | 10/6 |
| Сопротивление в открытом состоянии | 70/125мОм |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |