FDC6401N, MOSFETs Dual N-Ch 2.5V Spec Power Trench
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833458
- Артикул
- FDC6401N
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 1.7mm
- Brand:
- onsemi/Fairchild
- Series
- PowerTrench
Цена по запросу
(от 85,50 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET x2, полевой, 20В, 3А, 0,96Вт, SuperSOT-6 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | MOSFET |
| Width | 1.7mm |
| Brand: | onsemi/Fairchild |
| Series | PowerTrench |
| Series: | FDC6401N |
| Product: | MOSFET Small Signal |
| Pin Count | 6 |
| Fall Time: | 7 ns |
| Rise Time: | 7 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.05 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC6401N_NL |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.6 nC |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 960 mW |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 960 mW |
| Typical Gate Charge @ Vgs | 3.3 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 13 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 10 S |
| Maximum Drain Source Resistance | 106 mΩ |
| Maximum Continuous Drain Current | 3 A |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 0.5…1.1 В |
| Максимальное напряжение сток-исток Uси,В | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |