FDC637BNZ, Транзистор N-MOSFET, полевой, 20В, 6,2А, 1,6Вт, SuperSOT-6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060358232
- Артикул
- FDC637BNZ
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series:
- FDC637BNZ
- Product:
- MOSFET Small Signal
- Fall Time:
- 6 ns
Цена по запросу
(от 28 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Brand: | onsemi/Fairchild |
| Series: | FDC637BNZ |
| Product: | MOSFET Small Signal |
| Fall Time: | 6 ns |
| Rise Time: | 6 ns |
| Tradename: | PowerTrench |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-6 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 1.6 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 22 ns |
| Id - Continuous Drain Current: | 6.2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |