FDC6321C, Транзистор N/P-MOSFET, полевой, 25/-25В, 0,68/0,46А, 0,9Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8042953713
- Артикул
- FDC6321C
- Бренд
- ON Semiconductor***
- Type:
- FET
- Width
- 1.7mm
- Brand:
- onsemi/Fairchild
- Series:
- FDC6321C
Цена по запросу
(от 77,75 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| Type: | FET |
| Width | 1.7mm |
| Brand: | onsemi/Fairchild |
| Series: | FDC6321C |
| Product: | MOSFET Small Signals |
| Pin Count | 6 |
| Fall Time: | 8 ns, 9 ns |
| Rise Time: | 8 ns, 9 ns |
| Вес, г | 0.02 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC6321C_NL |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.3 nC, 1.5 nC |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Pd - Power Dissipation: | 900 mW |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 900 mW |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 3 ns, 7 ns |
| Maximum Drain Source Voltage | 25 V |
| Typical Turn-Off Delay Time: | 17 ns, 55 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 680 mA, 460 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.65V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1.45 S, 0.8 S |
| Maximum Drain Source Resistance | 1.1 Ω, 450 mΩ |
| Maximum Continuous Drain Current | 460 mA, 680 mA |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 650 mV, 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |