FDBL86063-F085, 100V 357W 1 N-Channel MO-299A MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048297462
- Артикул
- FDBL86063-F085
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 8 ns
- Rise Time:
- 16 ns
- Вес, г
- 1.4
Цена по запросу
(от 1 340 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 8 ns |
| Rise Time: | 16 ns |
| Вес, г | 1.4 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-LL8-8 |
| Transistor Type: | 1 N-Channel Power Trench MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 73 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 357 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 25 ns |
| Typical Turn-Off Delay Time: | 32 ns |
| Id - Continuous Drain Current: | 240 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 2.6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |