FDBL0210N80, MOSFETs Code D IMR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8008981972
- Артикул
- FDBL0210N80
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 737,81 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Seven Source |
| Package Width | 10.48(Max) |
| Package Height | 2.4(Max) |
| Package Length | 9.9(Max) |
| Product Category | Power MOSFET |
| Supplier Package | PSOF |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Структура | MOSFET |
| Standard Package Name | SO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 33 |
| Typical Rise Time (ns) | 63 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 357000 |
| Typical Gate Charge @ 10V (nC) | 130 |
| Typical Gate Charge @ Vgs (nC) | 130@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 39 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 61 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 240 |
| Typical Input Capacitance @ Vds (pF) | 10000@40V |
| Maximum Drain Source Resistance (MOhm) | 2@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |