FDB86566-F085, N-Channel 60 V 110A (Tc) 176W (Tj) Surface Mount TO-263 (D2PAK)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063938609
- Артикул
- FDB86566-F085
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- Yes
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 418,70 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 110A 3-контактный (2+Tab) D2PAK T/R Автомобильный AEC-Q101
Технические параметры
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.65(Max)mm |
| Package Length | 10.67(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 52 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 176000 |
| Typical Gate Charge @ 10V (nC) | 80 |
| Typical Gate Charge @ Vgs (nC) | 80@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 36 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 110 |
| Typical Input Capacitance @ Vds (pF) | 6655@30V |
| Maximum Drain-Source Resistance (mOhm) | 2.7@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |