FDB86360-F085, N-Channel 80 V 110A (Tc) 333W (Tc) Surface Mount TO-263 (D2PAK)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063938619
- Артикул
- FDB86360-F085
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Fall Time:
- 70 ns
- Rise Time:
- 197 ns
- Вес, г
- 1
Цена по запросу
(от 729,42 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi/Fairchild |
| Fall Time: | 70 ns |
| Rise Time: | 197 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-3 |
| Part # Aliases: | FDB86360_F085 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 207 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 800 |
| Pd - Power Dissipation: | 333 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 75 ns |
| Typical Turn-Off Delay Time: | 86 ns |
| Id - Continuous Drain Current: | 110 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |